Publication detail

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

ROUČKA, R., TOLLE, J., CROZIER, P., TSONG, I., KOUVETAKIS, J., SMITH, D.

Original Title

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

Type

journal article - other

Language

English

Original Abstract

Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics.

Key words in English

MOLECULAR-BEAM EPITAXY, SILICON-CARBIDE, SOLID-SOLUTIONS, ALUMINUM NITRIDE, DEPOSITION, SYSTEM, ALN, AIN

Authors

ROUČKA, R., TOLLE, J., CROZIER, P., TSONG, I., KOUVETAKIS, J., SMITH, D.

RIV year

2002

Released

23. 10. 2002

ISBN

0003-6951

Periodical

Applied Physics Letters

Year of study

79

Number

18

State

United States of America

Pages from

2880

Pages to

2882

Pages count

3

BibTex

@article{BUT40592,
  author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and I. {Tsong} and J. {Kouvetakis} and D. J. {Smith}",
  title="Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates",
  journal="Applied Physics Letters",
  year="2002",
  volume="79",
  number="18",
  pages="3",
  issn="0003-6951"
}