Publication result detail

Local optical characteristics of semiconductor surfaces

TOMÁNEK, P.; BENEŠOVÁ, M.; OTEVŘELOVÁ, D.; LÉTAL, P.

Original Title

Local optical characteristics of semiconductor surfaces

English Title

Local optical characteristics of semiconductor surfaces

Type

WoS Article

Original Abstract

Photoluminescence (PL), photoreflectance (PR) and photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental methods to investigate the properties of bulk semiconductors, microstructures, surfaces and interfaces. We present near-field local PL, PR and PC spectroscopic study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (SNOM) in combination with Nitrogen laser and tuning dye laser and with He-Ne laser. Reflection Scanning Near-field Optical Microscope (SNOM) employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. In the illumination-collection hybrid mode, the first one serves to excite the semiconductor sample and the second one to investigate characteristics of the structure and to pick up the PL and PR intensity reflected from the sample. In the illumination mode, the nanosource illuminates locally the semiconductor structure, and excites the photoelectrons in the PC spectroscopy. This near-field device is applied for the diagnostics of the defects in semiconductor devices. Take opportunity of the high lateral resolution of the microscope and combine it with fast micro-PL, PR responses, it is possible to locate for instance defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

English abstract

Photoluminescence (PL), photoreflectance (PR) and photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental methods to investigate the properties of bulk semiconductors, microstructures, surfaces and interfaces. We present near-field local PL, PR and PC spectroscopic study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (SNOM) in combination with Nitrogen laser and tuning dye laser and with He-Ne laser. Reflection Scanning Near-field Optical Microscope (SNOM) employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. In the illumination-collection hybrid mode, the first one serves to excite the semiconductor sample and the second one to investigate characteristics of the structure and to pick up the PL and PR intensity reflected from the sample. In the illumination mode, the nanosource illuminates locally the semiconductor structure, and excites the photoelectrons in the PC spectroscopy. This near-field device is applied for the diagnostics of the defects in semiconductor devices. Take opportunity of the high lateral resolution of the microscope and combine it with fast micro-PL, PR responses, it is possible to locate for instance defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Keywords

Scanning near-field optical microscopy, resolution, local photoluminescence, local photoreflectance, local current spectroscopy

Key words in English

Scanning near-field optical microscopy, resolution, local photoluminescence, local photoreflectance, local current spectroscopy

Authors

TOMÁNEK, P.; BENEŠOVÁ, M.; OTEVŘELOVÁ, D.; LÉTAL, P.

Released

25.02.2002

Publisher

SPIE

Location

Bellingham, USA

ISBN

0277-786X

Periodical

Proceedings of SPIE

Volume

4607

Number

2

State

United States of America

Pages from

168

Pages to

177

Pages count

10

BibTex

@article{BUT40430,
  author="Pavel {Tománek} and Markéta {Benešová} and Dana {Otevřelová} and Petr {Létal}",
  title="Local optical characteristics of semiconductor surfaces",
  journal="Proceedings of SPIE",
  year="2002",
  volume="4607",
  number="2",
  pages="168--177",
  issn="0277-786X"
}