Detail publikačního výsledku

Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity

ČECH, V.

Original Title

Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity

English Title

Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

A new technique is described, which is suitable for the evaluation of the bulk density of localized states in undoped a-Si:H from the timerelaxation of the conductivity limited by the space charge prepared by a previous injection of electrons.

English abstract

A new technique is described, which is suitable for the evaluation of the bulk density of localized states in undoped a-Si:H from the timerelaxation of the conductivity limited by the space charge prepared by a previous injection of electrons.

Key words in English

amorphous silicon, thin film, space-charge-limited currents

Authors

ČECH, V.

Released

01.01.2001

ISBN

0031-8965

Periodical

physica status solidi

Volume

187

Number

2

State

Federal Republic of Germany

Pages from

487

Pages count

5

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@article{BUT39850,
  author="Vladimír {Čech}",
  title="Determination of Density of Localized States in a-Si:H from the Time Relaxation of SCL Conductivity",
  journal="physica status solidi",
  year="2001",
  volume="187",
  number="2",
  pages="5",
  issn="0031-8965"
}