Detail publikačního výsledku

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

ČECH, V.

Original Title

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

English Title

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Both model and experimental results of electron injection in amorphous silicon n+-i-n+ devices with heavily doped n+ layers are presented using a realistic model of such a structure, developed by the author.

English abstract

Both model and experimental results of electron injection in amorphous silicon n+-i-n+ devices with heavily doped n+ layers are presented using a realistic model of such a structure, developed by the author.

Key words in English

amorphous silicon, thin film, space-charge-limited currents

Authors

ČECH, V.

Released

01.01.2000

ISBN

0021-4922

Periodical

JAPANESE JOURNAL OF APPLIED PHYSICS

Volume

88

Number

9

State

Japan

Pages from

5374

Pages count

7

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@article{BUT39847,
  author="Vladimír {Čech}",
  title="Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices",
  journal="JAPANESE JOURNAL OF APPLIED PHYSICS",
  year="2000",
  volume="88",
  number="9",
  pages="7",
  issn="0021-4922"
}