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RECMAN, M.
Original Title
Correlated NMOS Statistical Model
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
Monte-Carlo analysis of MOS circuits requires the generation of multiple sets of input parameters for the simulator's models. Since the model parameters can be highly correlated, the methods by which these input parameters are determined is critical for accurate results. The paper briefly reviews the principal techniques for the generation of MOSFET correlated model parameters and gives an example of statistical characterization of MOS2 model parameter VFB – flat band voltage which is used as an independent statistical model parameter. The comparison of correlated and uncorrelated models is presented.
English abstract
Keywords
mos modelling, statistical modelling
Key words in English
Authors
Released
01.01.2001
Publisher
Vyd. Ing. Zdeněk Novotný, Brno, 2001
Location
Brno
ISBN
80-214-2027-8
Book
Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings, Crete 3 - 12, 2001. Edited by V. Musil and J. Brzobohaty
Pages from
282
Pages count
8
BibTex
@inproceedings{BUT3944, author="Milan {Recman}", title="Correlated NMOS Statistical Model", booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings, Crete 3 - 12, 2001. Edited by V. Musil and J. Brzobohaty", year="2001", pages="8", publisher="Vyd. Ing. Zdeněk Novotný, Brno, 2001 ", address="Brno", isbn="80-214-2027-8" }