MATLAB SIMULINK MODEL OF THE 1ST GENERATION SWITCHED-CURRENT MEMORY CELL

MATLAB SIMULINK MODEL OF THE 1ST GENERATION SWITCHED-CURRENT MEMORY CELL

Paper in proceedings (conference paper)

The paper deals with the design of the first generation memory cell MATLAB model. There are described errors of the first generation switched current (SI) memory cell and also impact of the SI technique on the transfer function of the memory cell. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 m technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.

The paper deals with the design of the first generation memory cell MATLAB model. There are described errors of the first generation switched current (SI) memory cell and also impact of the SI technique on the transfer function of the memory cell. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 m technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.

switched current, memory cell, errors

switched current, memory cell, errors

PAVLÍK, M.; VRBA, R.

2010

01.09.2009

Ing. Novotný nakladatelství

Brno

978-80-214-3933-7

EDS' 09 IMAPS CS International Conference Proceedings

340

343

4