Publication result detail

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

ŠIKULA, J.; HLÁVKA, J.; SEDLÁKOVÁ, V.; HÖSCHEL, P.; GRILL, R.; SITA, Z.; ZEDNÍČEK, T.; TACANO, M.

Original Title

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

English Title

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

Type

Paper in proceedings (conference paper)

Original Abstract

An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.

English abstract

An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.

Keywords

Capacitor, NbO, Ta, MIS

Key words in English

Capacitor, NbO, Ta, MIS

Authors

ŠIKULA, J.; HLÁVKA, J.; SEDLÁKOVÁ, V.; HÖSCHEL, P.; GRILL, R.; SITA, Z.; ZEDNÍČEK, T.; TACANO, M.

Released

01.01.2005

Book

25th Capacitor and Resistor Technology Symposium

ISBN

0887-7491

Periodical

Capacitor and Resistor Technology

Volume

2005

Number

3

State

United States of America

Pages from

244

Pages count

5

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@inproceedings{BUT31370,
  author="Josef {Šikula} and Jan {Hlávka} and Vlasta {Sedláková} and Pavel {Höschel} and Roman {Grill} and Zdeněk {Sita} and Tomáš {Zedníček} and Munecazu {Tacano}",
  title="Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison",
  booktitle="25th Capacitor and Resistor Technology Symposium",
  year="2005",
  journal="Capacitor and Resistor Technology",
  volume="2005",
  number="3",
  pages="5",
  issn="0887-7491"
}