A MATLAB Model of the Second Generation Switched Current Memory Cell

A MATLAB Model of the Second Generation Switched Current Memory Cell

Paper in proceedings (conference paper)

The paper deals with the design of the second generation memory cell MATLAB model. There are described errors of the second generation switched current (SI) memory cell and impact of the SI technique on the transfer function of the memory cell, too. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 m technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.

The paper deals with the design of the second generation memory cell MATLAB model. There are described errors of the second generation switched current (SI) memory cell and impact of the SI technique on the transfer function of the memory cell, too. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 m technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.

switched current, memory cell, errors, model

switched current, memory cell, errors, model

PAVLÍK, M.; HÁZE, J.; VRBA, R.

2010

11.10.2009

IEEE Computer Society

Sliema

978-0-7695-3832-7

Proceedings The Second International Conference on Advances in Circuits, Electronics and Micro-electronics CENICS 2009

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