On the determination of silicon solar cell properties via capacitance characteristics

On the determination of silicon solar cell properties via capacitance characteristics

Paper in proceedings (conference paper)

Diffusion technology based PN junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions (hundreds of cm2) contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased PN junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown. The capacitance versus reverse voltage plots were measured using the "Auto balancing bridge method", which proved to serve the purpose very well. Thus obtained capacitance versus reverse voltage characteristics provide information on the inhomogeneity nature resulting from local variations of the impurity concentration. Our measurement results have shown that valuable information on the junction, such as, the solar cell P-region acceptor concentration NA, can be obtained via numerical result processing.

Diffusion technology based PN junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions (hundreds of cm2) contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased PN junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown. The capacitance versus reverse voltage plots were measured using the "Auto balancing bridge method", which proved to serve the purpose very well. Thus obtained capacitance versus reverse voltage characteristics provide information on the inhomogeneity nature resulting from local variations of the impurity concentration. Our measurement results have shown that valuable information on the junction, such as, the solar cell P-region acceptor concentration NA, can be obtained via numerical result processing.

Defects, Capacitance, Silicon Solar Cell

Defects, Capacitance, Silicon Solar Cell

MACKŮ, R.; ŠKARVADA, P.; KOKTAVÝ, P.

2010

01.10.2008

WIP-Renewable Energies

Valencia, Spain

3-936338-24-8

Proceedings of 23rd European Photovoltaic Solar Energy Conference

364

369

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