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Detail publikačního výsledku
ANDREEV, A.
Original Title
Analysis of Fermi Level Position the CdTe Single Crystal
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
The CdTe single crystal radiation detector resistance was measured during long time inter-val with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the tempera-ture became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing
English abstract
Keywords
Fermi Level Position, CdTe detectors, Hole concentration, hole mobility
Key words in English
Authors
Released
01.01.2007
Publisher
Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno
Location
Brno, Czech Republic
ISBN
978-80-214-3409-7
Book
Proceedings of the 13th Conference Student EEICT 2007, Volume 3
Pages from
215
Pages count
5
Full text in the Digital Library
http://hdl.handle.net/
BibTex
@inproceedings{BUT22567, author="Alexey {Andreev}", title="Analysis of Fermi Level Position the CdTe Single Crystal", booktitle="Proceedings of the 13th Conference Student EEICT 2007, Volume 3", year="2007", pages="5", publisher="Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno", address="Brno, Czech Republic", isbn="978-80-214-3409-7" }