Publication result detail

Quantum dots array: an approach to multipixel devices

Martyniuk, O.; Chaudhary, V.; Rhanbouri, MA.; Laguta, O.; Tahsin, M.; Gaskill, DK.; El Fatimy,A .; Neugebauer, P.

Original Title

Quantum dots array: an approach to multipixel devices

English Title

Quantum dots array: an approach to multipixel devices

Type

WoS Article

Original Abstract

Graphene has been proven to be an excellent material for high-frequency electromagnetic radiation detection. Here, we are reporting the graphene quantum dots (GQDs) devices designed as multi-parallel arrays of the dots (200 nm in diameter) between the source and drain electrodes. These state-of-the-art devices provide a novel concept of tuning the total device area and impedance while maintaining superior performance. The GQDs devices have been fabricated on silicon oxide substrate and analyzed for their transport properties. The multi-parallel array of GQDs on SiO2/Si substrates has depicted the possibility of tuning the activation energy depending on the back gate bias and the number of parallelly arranged GQDs while keeping the temperature dependence of resistance higher than 75 M Omega K-1 and 5 G Omega K-1 (for 2-dots and 8-dots devices). The results presented here pave the way for further optimization and realization of chip-scale arrays of GQDs-based multipixel devices, enhancing the applications in imaging and magneto-optical spectroscopy.

English abstract

Graphene has been proven to be an excellent material for high-frequency electromagnetic radiation detection. Here, we are reporting the graphene quantum dots (GQDs) devices designed as multi-parallel arrays of the dots (200 nm in diameter) between the source and drain electrodes. These state-of-the-art devices provide a novel concept of tuning the total device area and impedance while maintaining superior performance. The GQDs devices have been fabricated on silicon oxide substrate and analyzed for their transport properties. The multi-parallel array of GQDs on SiO2/Si substrates has depicted the possibility of tuning the activation energy depending on the back gate bias and the number of parallelly arranged GQDs while keeping the temperature dependence of resistance higher than 75 M Omega K-1 and 5 G Omega K-1 (for 2-dots and 8-dots devices). The results presented here pave the way for further optimization and realization of chip-scale arrays of GQDs-based multipixel devices, enhancing the applications in imaging and magneto-optical spectroscopy.

Keywords

graphene; quantum dots; nanodevices

Key words in English

graphene; quantum dots; nanodevices

Authors

Martyniuk, O.; Chaudhary, V.; Rhanbouri, MA.; Laguta, O.; Tahsin, M.; Gaskill, DK.; El Fatimy,A .; Neugebauer, P.

Released

31.03.2025

Publisher

IOP Publishing Ltd

Location

BRISTOL

ISBN

1361-6463

Periodical

JOURNAL OF PHYSICS D-APPLIED PHYSICS

Volume

58

Number

13

State

United Kingdom of Great Britain and Northern Ireland

Pages count

7

URL

https://iopscience.iop.org/article/10.1088/1361-6463/adacf8

BibTex

@article{BUT197897,
  author="Oleh {Martyniuk} and Vivek {Chaudhary} and Oleksii {Laguta} and Muhammad {Tahsin} and Abdelouahad {El Fatimy} and Petr {Neugebauer} and Mohamed Amine {Rhanbouri} and Kurt {Gaskill}",
  title="Quantum dots array: an approach to multipixel devices",
  journal="JOURNAL OF PHYSICS D-APPLIED PHYSICS",
  year="2025",
  volume="58",
  number="13",
  pages="7",
  doi="10.1088/1361-6463/adacf8",
  issn="0022-3727",
  url="https://iopscience.iop.org/article/10.1088/1361-6463/adacf8"
}