Publication result detail

Defect-driven antiferromagnetic domain walls in CuMnAs films

Reimers, S.; Kriegner, D.; Gomonay, O.;Carbone, D.; Krizek, F.; Novák, V.; Campion, R.; MacCherozzi, F.; Björling, A.; Amin, O.; Barton, L.; Poole, S.; Omari, K.; Michalička, J.; Man, O.; Sinova, J.; Jungwirth, T.; Wadley, P.; Dhesi, S.; Edmonds, K. W.

Original Title

Defect-driven antiferromagnetic domain walls in CuMnAs films

English Title

Defect-driven antiferromagnetic domain walls in CuMnAs films

Type

Paper in proceedings (conference paper)

Original Abstract

Antiferromagnetic (AF) materials offer a route to realising high-speed, high-density data storage devices that are robust against magnetic fields due to their intrinsic dynamics in the THz-regime and the lack magnetic stray fields. The key to functionality and efficiency is the control of AF domains and domain walls. Although AF domain structures are known to be sensitive to magnetoelastic effects, the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning x-ray diffraction microscopy and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects, which determine the location and orientation of 180° and 90° domain walls. The results emphasise the high sensitivity of the AF domain structure to the crystallographic nanostructure and provide a route to optimisng device performance.

English abstract

Antiferromagnetic (AF) materials offer a route to realising high-speed, high-density data storage devices that are robust against magnetic fields due to their intrinsic dynamics in the THz-regime and the lack magnetic stray fields. The key to functionality and efficiency is the control of AF domains and domain walls. Although AF domain structures are known to be sensitive to magnetoelastic effects, the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning x-ray diffraction microscopy and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects, which determine the location and orientation of 180° and 90° domain walls. The results emphasise the high sensitivity of the AF domain structure to the crystallographic nanostructure and provide a route to optimisng device performance.

Keywords

Antiferromagnetism; Domain Walls; Photoemission Electron Microscopy; Scanning X-ray Diffraction Microscopy

Key words in English

Antiferromagnetism; Domain Walls; Photoemission Electron Microscopy; Scanning X-ray Diffraction Microscopy

Authors

Reimers, S.; Kriegner, D.; Gomonay, O.;Carbone, D.; Krizek, F.; Novák, V.; Campion, R.; MacCherozzi, F.; Björling, A.; Amin, O.; Barton, L.; Poole, S.; Omari, K.; Michalička, J.; Man, O.; Sinova, J.; Jungwirth, T.; Wadley, P.; Dhesi, S.; Edmonds, K. W.

RIV year

2025

Released

15.05.2023

ISBN

979-8-3503-3836-2

Book

2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings

Pages count

2

BibTex

@inproceedings{BUT187775,
  author="Reimers, S. and Kriegner, D. and Gomonay, O. and Carbone, D. and Krizek, F. and Novák, V. and Campion, R. and MacCherozzi, F. and Björling, A. and Amin, O. and Barton, L. and Poole, S. and Omari, K. and Michalička, J. and Man, O. and Sinova, J. and Jungwirth, T. and Wadley, P. and Dhesi, S. and Edmonds, K. W.",
  title="Defect-driven antiferromagnetic domain walls in CuMnAs films",
  booktitle="2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings",
  year="2023",
  pages="2",
  doi="10.1109/INTERMAGShortPapers58606.2023.10228289",
  isbn="979-8-3503-3836-2"
}