Publication result detail

Bismuth, by high-sensitivity low energy ion scattering

VANÍČKOVÁ, E.; PRŮŠA, S.; ŠIKOLA, T.

Original Title

Bismuth, by high-sensitivity low energy ion scattering

English Title

Bismuth, by high-sensitivity low energy ion scattering

Type

WoS Article

Original Abstract

Low energy ion scattering is an analytical technique with extreme surface sensitivity. It enables qualitative and quantitative elemental analy-sis of the outermost atomic layer. Straightforward quantification is possible by using well-defined reference samples, as the measured signal is related to known surface atomic concentration. Bi, like Pb, exhibits strong oscillatory behavior of backscattered ion yield when primary ion beam energy is varied. Here, we present the spectra of bismuth obtained by scattering of 4He+ ions in a wide range of energies (0.5-6.0 keV). These should cover a regularly used range of energies for He analysis and serve as standards or reference spectra for analysis of bismuth if the scattering angle is 145 degrees or similar. For this purpose, high-purity foil cleaned by ion sputtering was used. The sensitivity of the instrument in use (high-sensitivity low energy ion scattering spectrometer) is defined by the 3 keV4He+ spectrum of copper. The related atomic sensitivity and relative sensitivity factors are determined.

English abstract

Low energy ion scattering is an analytical technique with extreme surface sensitivity. It enables qualitative and quantitative elemental analy-sis of the outermost atomic layer. Straightforward quantification is possible by using well-defined reference samples, as the measured signal is related to known surface atomic concentration. Bi, like Pb, exhibits strong oscillatory behavior of backscattered ion yield when primary ion beam energy is varied. Here, we present the spectra of bismuth obtained by scattering of 4He+ ions in a wide range of energies (0.5-6.0 keV). These should cover a regularly used range of energies for He analysis and serve as standards or reference spectra for analysis of bismuth if the scattering angle is 145 degrees or similar. For this purpose, high-purity foil cleaned by ion sputtering was used. The sensitivity of the instrument in use (high-sensitivity low energy ion scattering spectrometer) is defined by the 3 keV4He+ spectrum of copper. The related atomic sensitivity and relative sensitivity factors are determined.

Keywords

High-sensitivity low energy ion scattering; HS-LEIS; LEIS; ISS; Bi; bismuth; oscillations

Key words in English

High-sensitivity low energy ion scattering; HS-LEIS; LEIS; ISS; Bi; bismuth; oscillations

Authors

VANÍČKOVÁ, E.; PRŮŠA, S.; ŠIKOLA, T.

RIV year

2024

Released

01.12.2023

Publisher

AIP Publishing

Location

MELVILLE

ISBN

1520-8575

Periodical

Surface Science Spectra

Volume

30

Number

2

State

United States of America

Pages from

1

Pages to

15

Pages count

15

URL

https://pubs.aip.org/avs/sss/article/30/2/024201/2908438/Bismuth-by-high-sensitivity-low-energy-ion

Full text in the Digital Library

http://hdl.handle.net/11012/245184

BibTex

@article{BUT187409,
  author="Elena {Vaníčková} and Stanislav {Průša} and Tomáš {Šikola}",
  title="Bismuth, by high-sensitivity low energy ion scattering",
  journal="Surface Science Spectra",
  year="2023",
  volume="30",
  number="2",
  pages="1--15",
  doi="10.1116/6.0002669",
  issn="1055-5269",
  url="https://pubs.aip.org/avs/sss/article/30/2/024201/2908438/Bismuth-by-high-sensitivity-low-energy-ion"
}

Documents

024201_1_6.0002669