Analysis of a Simple Model Contact Au-CdTe by detectors of Gamma Ray

Analysis of a Simple Model Contact Au-CdTe by detectors of Gamma Ray

Paper in proceedings (conference paper)

The energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. The energy band diagram in the metal shows the position of the Fermi level. The energy band diagram in the semiconductor shows the bottom of the conducting band Ec, the valence band ceiling Ev, the Fermi level and impurity activation energy. A contact field arises in the area of CdTe-metal interface. It causes bending of the energy bands in the depleted zone of the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined.

The energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. The energy band diagram in the metal shows the position of the Fermi level. The energy band diagram in the semiconductor shows the bottom of the conducting band Ec, the valence band ceiling Ev, the Fermi level and impurity activation energy. A contact field arises in the area of CdTe-metal interface. It causes bending of the energy bands in the depleted zone of the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined.

Energy Band, Shottky barrier, Depleted Zone

Energy Band, Shottky barrier, Depleted Zone

Alexey Andreev, Jiri Zajacek

01.01.2006

Markus Detert

Germany

3-934142-23-0

ISSE 2006. 29th International Spring Seminar on Electronics Technology

27

4

http://hdl.handle.net/