Detail publikačního výsledku

Semiconductor Quantum Dots

Bláha, M.

Original Title

Semiconductor Quantum Dots

English Title

Semiconductor Quantum Dots

Type

Paper in proceedings (conference paper)

Original Abstract

This work discuss problem of quantum dots and electron density, 2DEG density and coulomb blockade in quantum dots. The schematic diagram of a quantum dot in lateral geometry is shown. The fabrication procedure for evaporating metal gate eletrodes and dry etching is demonstated.

English abstract

This work discuss problem of quantum dots and electron density, 2DEG density and coulomb blockade in quantum dots. The schematic diagram of a quantum dot in lateral geometry is shown. The fabrication procedure for evaporating metal gate eletrodes and dry etching is demonstated.

Keywords

Quantum dots, coulomb blockade, gate evaporation, dry etching, 2DEG.

Key words in English

Quantum dots, coulomb blockade, gate evaporation, dry etching, 2DEG.

Authors

Bláha, M.

Released

01.01.2006

Location

Brno

ISBN

80-214-3162-8

Book

Student EEICT 2006

Pages from

138

Pages count

5

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@inproceedings{BUT18577,
  author="Martin {Bláha}",
  title="Semiconductor Quantum Dots",
  booktitle="Student EEICT 2006",
  year="2006",
  number="první",
  pages="5",
  address="Brno",
  isbn="80-214-3162-8"
}