Detail publikačního výsledku

Metal-Semiconductor Contact Modeling and Transport Characteristics Detectors of Radiation Based on the CdTe

Alexey Andreev, Jiri zajacek

Original Title

Metal-Semiconductor Contact Modeling and Transport Characteristics Detectors of Radiation Based on the CdTe

English Title

Metal-Semiconductor Contact Modeling and Transport Characteristics Detectors of Radiation Based on the CdTe

Type

Paper in proceedings (conference paper)

Original Abstract

Series VA characteristic measurements in the dark were carried out at de-pendence on temperature and we have found cur-rent’s function depending from temperature. We have found differences in transport characteristics after temperature degradation process.

English abstract

Series VA characteristic measurements in the dark were carried out at de-pendence on temperature and we have found cur-rent’s function depending from temperature. We have found differences in transport characteristics after temperature degradation process.

Keywords

CdTe sensor, 1/f noise,Schottky barrier

Key words in English

CdTe sensor, 1/f noise,Schottky barrier

Authors

Alexey Andreev, Jiri zajacek

Released

01.01.2006

Publisher

TU Vienna

Location

Vienna, Austria

ISBN

3-902463-05-8

Book

Proceedings of the Junior Scientist Conference 2006

Pages from

191

Pages count

2

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@inproceedings{BUT18506,
  author="Alexey {Andreev} and Jiří {Zajaček}",
  title="Metal-Semiconductor Contact Modeling and Transport Characteristics Detectors of Radiation Based on the CdTe",
  booktitle="Proceedings of the Junior Scientist Conference 2006",
  year="2006",
  pages="2",
  publisher="TU Vienna",
  address="Vienna, Austria",
  isbn="3-902463-05-8"
}