Publication result detail

Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence

ERICH, M.; GLOGINJIC, M.; MRAVIK, Ž.; VRBAN, B.; ČERBA, Š.; LÜLEY, J.; NEČAS, V.; FILOVÁ, V.; KATOVSKÝ, K.; ŠŤASTNÝ, O.; PETROVIC, S.

Original Title

Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence

English Title

Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence

Type

Paper in proceedings (conference paper)

Original Abstract

The 6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.

English abstract

The 6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.

Keywords

6H-SiC; Si ion irradiation; Elastic Backscattering Spectroscopy; ion implementation

Key words in English

6H-SiC; Si ion irradiation; Elastic Backscattering Spectroscopy; ion implementation

Authors

ERICH, M.; GLOGINJIC, M.; MRAVIK, Ž.; VRBAN, B.; ČERBA, Š.; LÜLEY, J.; NEČAS, V.; FILOVÁ, V.; KATOVSKÝ, K.; ŠŤASTNÝ, O.; PETROVIC, S.

RIV year

2024

Released

05.05.2023

Publisher

American Institute of Physics Inc.

Location

AIP College Park, Maryland, USA Physical Science Publishing - AIP Publishing LLC Woodbury, Long Island, NY, USA

ISBN

978-0-7354-4479-9

Book

AIP Conference Proceedings 2778 - 27th Conference on Applied Physics of Condensed Matter (APCOM 2022)

Edition

2778

ISBN

0094-243X

Periodical

AIP conference proceedings

Volume

2778

Number

1

State

United States of America

Pages from

1

Pages to

5

Pages count

5

URL

https://pubs.aip.org/aip/acp/article/2778/1/060002/2888698/

BibTex

@inproceedings{BUT184138,
  author="Marko {Erich} and Marko {Gloginjic} and Željko {Mravik} and Branislav {Vrban} and Štefan {Čerba} and Jakub {Lüley} and Vladimír {Nečas} and Vendula {Vrtalová} and Karel {Katovský} and Ondřej {Šťastný} and Srdjan {Petrovic}",
  title="Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence",
  booktitle="AIP Conference Proceedings 2778 - 27th Conference on Applied Physics of Condensed Matter (APCOM 2022)",
  year="2023",
  series="2778",
  journal="AIP conference proceedings",
  volume="2778",
  number="1",
  pages="1--5",
  publisher="American Institute of Physics Inc.",
  address="AIP College Park, Maryland, USA
Physical Science Publishing - AIP Publishing LLC
Woodbury, Long Island, NY, USA",
  doi="10.1063/5.0136670",
  isbn="978-0-7354-4479-9",
  issn="0094-243X",
  url="https://pubs.aip.org/aip/acp/article/2778/1/060002/2888698/"
}