Publication detail

Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence

ERICH, M. GLOGINJIC, M. MRAVIK, Ž. VRBAN, B. ČERBA, Š. LÜLEY, J. NEČAS, V. FILOVÁ, V. KATOVSKÝ, K. ŠŤASTNÝ, O. PETROVIC, S.

Original Title

Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence

Type

conference paper

Language

English

Original Abstract

The 6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.

Keywords

6H-SiC; Si ion irradiation; Elastic Backscattering Spectroscopy; ion implementation

Authors

ERICH, M.; GLOGINJIC, M.; MRAVIK, Ž.; VRBAN, B.; ČERBA, Š.; LÜLEY, J.; NEČAS, V.; FILOVÁ, V.; KATOVSKÝ, K.; ŠŤASTNÝ, O.; PETROVIC, S.

Released

5. 5. 2023

Publisher

American Institute of Physics Inc.

Location

AIP College Park, Maryland, USA Physical Science Publishing - AIP Publishing LLC Woodbury, Long Island, NY, USA

ISBN

978-0-7354-4479-9

Book

AIP Conference Proceedings 2778 - 27th Conference on Applied Physics of Condensed Matter (APCOM 2022)

Edition

2778

Edition number

1

ISBN

0094-243X

Periodical

AIP conference proceedings

Year of study

2778

Number

1

State

United States of America

Pages from

1

Pages to

5

Pages count

5

URL

https://pubs.aip.org/aip/acp/article/2778/1/060002/2888698/

BibTex

@inproceedings{BUT184138,
  author="Marko {Erich} and Marko {Gloginjic} and Željko {Mravik} and Branislav {Vrban} and Štefan {Čerba} and Jakub {Lüley} and Vladimír {Nečas} and Vendula {Filová} and Karel {Katovský} and Ondřej {Šťastný} and Srdjan {Petrovic}",
  title="Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence",
  booktitle="AIP Conference Proceedings 2778 - 27th Conference on Applied Physics of Condensed Matter (APCOM 2022)",
  year="2023",
  series="2778",
  journal="AIP conference proceedings",
  volume="2778",
  number="1",
  pages="1--5",
  publisher="American Institute of Physics Inc.",
  address="AIP College Park, Maryland, USA
Physical Science Publishing - AIP Publishing LLC
Woodbury, Long Island, NY, USA",
  doi="10.1063/5.0136670",
  isbn="978-0-7354-4479-9",
  issn="0094-243X",
  url="https://pubs.aip.org/aip/acp/article/2778/1/060002/2888698/"
}