Publication result detail

Direct Visualization of Subnanometer Variations in the Excitonic Spectra of 2D/3D Semiconductor/Metal Heterostructures

Reidy, K.; Majchrzak, PE.; Haas, B.; Thomsen, JD.; Konecna, A.; Park, E.; Klein, J.; Jones, AJH.; Volckaert, K. ; Biswas, D.; Watson, MD.; Cacho, C.; Narang, P.; Koch, CT.; Ulstrup, S.; Ross, FM.; Idrobo, JC.

Original Title

Direct Visualization of Subnanometer Variations in the Excitonic Spectra of 2D/3D Semiconductor/Metal Heterostructures

English Title

Direct Visualization of Subnanometer Variations in the Excitonic Spectra of 2D/3D Semiconductor/Metal Heterostructures

Type

WoS Article

Original Abstract

The integration of metallic contacts with two-dimensional (2D) semiconductors is routinely required for the fabrication of nanoscale devices. However, nanometer-scale variations in the 2D/metal interface can drastically alter the local optoelectronic properties. Here, we map local excitonic changes of the 2D semiconductor MoS2 in contact with Au. We utilize a suspended and epitaxially grown 2D/metal platform that allows correlated electron energy-loss spectroscopy (EELS) and angle resolved photoelectron spectroscopy (nanoARPES) mapping. Spatial localization of MoS2 excitons uncovers an additional EELS peak related to the MoS2/Au interface. NanoARPES measurements indicate that Au-S hybridization decreases substantially with distance from the 2D/metal interface, suggesting that the observed EELS peak arises due to dielectric screening of the excitonic Coulomb interaction. Our results suggest that increasing the van der Waals distance could optimize excitonic spectra of mixed-dimensional 2D/3D interfaces and highlight opportunities for Coulomb engineering of exciton energies by the local dielectric environment or moire engineering.

English abstract

The integration of metallic contacts with two-dimensional (2D) semiconductors is routinely required for the fabrication of nanoscale devices. However, nanometer-scale variations in the 2D/metal interface can drastically alter the local optoelectronic properties. Here, we map local excitonic changes of the 2D semiconductor MoS2 in contact with Au. We utilize a suspended and epitaxially grown 2D/metal platform that allows correlated electron energy-loss spectroscopy (EELS) and angle resolved photoelectron spectroscopy (nanoARPES) mapping. Spatial localization of MoS2 excitons uncovers an additional EELS peak related to the MoS2/Au interface. NanoARPES measurements indicate that Au-S hybridization decreases substantially with distance from the 2D/metal interface, suggesting that the observed EELS peak arises due to dielectric screening of the excitonic Coulomb interaction. Our results suggest that increasing the van der Waals distance could optimize excitonic spectra of mixed-dimensional 2D/3D interfaces and highlight opportunities for Coulomb engineering of exciton energies by the local dielectric environment or moire engineering.

Keywords

excitons; electron energy-loss spectroscopy (EELS); angle resolved photoemission spectroscopy (nanoARPES); dielectric screening; moire; 2D/3D interface

Key words in English

excitons; electron energy-loss spectroscopy (EELS); angle resolved photoemission spectroscopy (nanoARPES); dielectric screening; moire; 2D/3D interface

Authors

Reidy, K.; Majchrzak, PE.; Haas, B.; Thomsen, JD.; Konecna, A.; Park, E.; Klein, J.; Jones, AJH.; Volckaert, K. ; Biswas, D.; Watson, MD.; Cacho, C.; Narang, P.; Koch, CT.; Ulstrup, S.; Ross, FM.; Idrobo, JC.

RIV year

2024

Released

08.02.2023

Publisher

AMER CHEMICAL SOC

Location

WASHINGTON

ISBN

1530-6992

Periodical

NANO LETTERS

Volume

23

Number

3

State

United States of America

Pages from

1068

Pages to

1076

Pages count

9

URL

BibTex

@article{BUT183425,
  author="Reidy, K. and Majchrzak, PE. and Haas, B. and Thomsen, JD. and Konecna, A. and Park, E. and Klein, J. and Jones, AJH. and Volckaert, K. and Biswas, D. and Watson, MD. and Cacho, C. and Narang, P. and Koch, CT. and Ulstrup, S. and Ross, FM. and Idrobo, JC.",
  title="Direct Visualization of Subnanometer Variations in the Excitonic Spectra of 2D/3D Semiconductor/Metal Heterostructures",
  journal="NANO LETTERS",
  year="2023",
  volume="23",
  number="3",
  pages="1068--1076",
  doi="10.1021/acs.nanolett.2c04749",
  issn="1530-6984",
  url="https://pubs.acs.org/doi/10.1021/acs.nanolett.2c04749"
}