High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

WoS Article

Bioelectronic devices such as neural stimulation and recording devices require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion-beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion-beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

Bioelectronic devices such as neural stimulation and recording devices require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion-beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion-beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

bioelectronics, ion-beam sputtering, multielectrode arrays, titanium nitride

bioelectronics, ion-beam sputtering, multielectrode arrays, titanium nitride

GABLECH, I.; MIGLIACCIO, L.; BRODSKÝ, J.; HAVLÍČEK, M.; PODEŠVA, P.; HRDÝ, R.; EHLICH, J.; GRYSZEL, M.; GLOWACKI, E.

2024

02.02.2023

Wiley-VCH GmbH

Německo

2199-160X

Advanced Electronic Materials

9

4

Federal Republic of Germany

1

11

11

https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980

http://hdl.handle.net/11012/213717

2023-Gablech