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Zdeg, I.; Al-Shami, A.; Tiouichi, G.; Absike, H.; Chaudhary, V.; Neugebauer, P.; Nouneh, K.; Belhboub, A.; Mounkachi, O.; El Fatimy, A.
Original Title
Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport
English Title
Type
WoS Article
Original Abstract
This work investigates the transport properties of layered black phosphorus (BP) grown by the chemical vapor transport (CVT). The electrical measurements are carried out at a temperature ranging from 300 to 2 K and a magnetic field up to 16 Tesla. The CVT-grown BP exhibits p-type conduction with an acceptor's 14-1.2 meV activation energy. The concentration of ionized acceptors is 1.2x1017cm-3$1.2 \times {10<^>{17}}{\rm{c}}{{\rm{m}}<^>{ - 3}}$ Moreover, the Hall mobility is found to be 138 cm(2)V(-1)s(-1) and 4 x 10(4) cm(2)V(-1)s(-1), respectively, at room temperature and 2 K. This work reveals the potential of CVT synthesis as a simple, nontoxic, and cheap technique to make high-quality BP crystals with high carrier mobility ready as a solid foundation for BP single-crystal application.
English abstract
Keywords
black phosphorus; chemical vapor transport; defects; mobility
Key words in English
Authors
RIV year
2024
Released
01.01.2023
Publisher
WILEY-V C H VERLAG GMBH
Location
WEINHEIM
ISBN
1521-4079
Periodical
CRYSTAL RESEARCH AND TECHNOLOGY
Volume
58
Number
1
State
Federal Republic of Germany
Pages count
6
URL
https://onlinelibrary.wiley.com/doi/10.1002/crat.202200164
BibTex
@article{BUT182368, author="Zdeg, I. and Al-Shami, A. and Tiouichi, G. and Absike, H. and Chaudhary, V. and Neugebauer, P. and Nouneh, K. and Belhboub, A. and Mounkachi, O. and El Fatimy, A.", title="Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport", journal="CRYSTAL RESEARCH AND TECHNOLOGY", year="2023", volume="58", number="1", pages="6", doi="10.1002/crat.202200164", issn="0232-1300", url="https://onlinelibrary.wiley.com/doi/10.1002/crat.202200164" }