Publication detail

COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE

GLOGINJIC, M. ERICH, M. MRAVIK, Ž. VRBAN, B. ČERBA, Š. LÜLEY, J. FILOVÁ, V. KATOVSKÝ, K. ŠŤASTNÝ, O. BURIAN, J. PETROVIC, S.

Original Title

COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE

Type

journal article in Web of Science

Language

English

Original Abstract

Due to its unique material properties, such as extreme hardness and radiation resistance, silicon carbide has been used as an important construction material for environments with extreme conditions, like those present in nu clear reactors. As such, it is constantly exposed to energetic particles (e. g., neutrons) and consequently subjected to gradual crystal lattice degradation. In this article, the 6H-SiC crystal damage has been simulated by the implantation of 4 MeV C3+ ions in the (0001) axial direction of a single 6H-SiC crystal to the ion fluences of 1.359.10(15) cm(-2), 6.740.10(15) cm(-2), and 2.02.10(16) cm(-2). These implanted samples were subsequently analyzed by Rutherford and elastic backscattering spectrometry in the channeling orientation (RBS/C & EBS/C) by the usage of 1 MeV protons. Obtained spectra were analyzed by channeling simulation phenomenological computer code (CSIM) to obtain quantitative crystal damage depth profiles. The difference between the positions of damage profile maxima obtained by CSIM code and one simulated with stopping and range of ions in matter (SRIM), a Monte Carlo based computer code focused on ion implantation simulation in random crystal direction only, is about 10 %. Therefore, due to small profile depth shifts, the usage of the iterative procedure for calculating crystal damage depth profiles is proposed. It was shown that profiles obtained by iterative procedure show very good agreement with the ones obtained with CSIM code. Addition ally, with the introduction of channeling to random energy loss ratio the energy to depth profile scale conversion, the agreement with CSIM profiles becomes excellent.

Keywords

silicon carbide; computer simulation; iterative procedure; RBS/C and EBS/C spectrometry

Authors

GLOGINJIC, M.; ERICH, M.; MRAVIK, Ž.; VRBAN, B.; ČERBA, Š.; LÜLEY, J.; FILOVÁ, V.; KATOVSKÝ, K.; ŠŤASTNÝ, O.; BURIAN, J.; PETROVIC, S.

Released

16. 6. 2022

Publisher

VINCA INST NUCLEAR SCI

Location

MIHAJLA PETROVICA-ALASA 12-14 VINCA, 11037 BELGRADE. POB 522, BELGRADE 11001, SERBIA

ISBN

1451-3994

Periodical

NUCL TECHNOL RADIAT

Year of study

37

Number

2

State

Republic of Serbia

Pages from

128

Pages to

137

Pages count

10

URL

https://ntrp.vinca.rs/2022_2/Contents2022_2.html

BibTex

@article{BUT181366,
  author="Marko {Gloginjic} and Marko {Erich} and Željko {Mravik} and Branislav {Vrban} and Štefan {Čerba} and Jakub {Lüley} and Vendula {Filová} and Karel {Katovský} and Ondřej {Šťastný} and Jiří {Burian} and Srdjan {Petrovic}",
  title="COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE",
  journal="NUCL TECHNOL RADIAT",
  year="2022",
  volume="37",
  number="2",
  pages="128--137",
  doi="10.2298/NTRP2202128G",
  issn="1451-3994",
  url="https://ntrp.vinca.rs/2022_2/Contents2022_2.html"
}