Publication result detail

Simultaneous Imaging of Dopants and Free Charge Carriers by Monochromated EELS

YANG, H.; KONEČNÁ, A.; XU, X.; CHEONG, S. W.; BATSON, P. E.; GARCÍA DE ABAJO, F. J.; GARFUNKEL, E.

Original Title

Simultaneous Imaging of Dopants and Free Charge Carriers by Monochromated EELS

English Title

Simultaneous Imaging of Dopants and Free Charge Carriers by Monochromated EELS

Type

WoS Article

Original Abstract

Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with high enough spatial and spectral resolution. Here, we demonstrate nanoscale imaging of both dopants and free charge carriers in La-doped BaSnO3 (BLSO) using high-resolution electron energy-loss spectroscopy (EELS). By analyzing high-and low-energy excitations in EELS, we reveal chemical and electronic inhomogeneities within a single BLSO nanocrystal. The inhomogeneous doping leads to distinctive localized infrared surface plasmons, including a previously unobserved plasmon mode that is highly confined between high-and low-doping regions. We further quantify the carrier density, effective mass, and dopant activation percentage by EELS and transport measurements on the bulk single crystals of BLSO. These results not only represent a practical approach for studying heterogeneities in solids and understanding structure-property relationships at the nanoscale, but also demonstrate the possibility of infrared plasmon tuning by leveraging nanoscale doping texture.

English abstract

Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with high enough spatial and spectral resolution. Here, we demonstrate nanoscale imaging of both dopants and free charge carriers in La-doped BaSnO3 (BLSO) using high-resolution electron energy-loss spectroscopy (EELS). By analyzing high-and low-energy excitations in EELS, we reveal chemical and electronic inhomogeneities within a single BLSO nanocrystal. The inhomogeneous doping leads to distinctive localized infrared surface plasmons, including a previously unobserved plasmon mode that is highly confined between high-and low-doping regions. We further quantify the carrier density, effective mass, and dopant activation percentage by EELS and transport measurements on the bulk single crystals of BLSO. These results not only represent a practical approach for studying heterogeneities in solids and understanding structure-property relationships at the nanoscale, but also demonstrate the possibility of infrared plasmon tuning by leveraging nanoscale doping texture.

Keywords

doped semiconductor; high-mobility oxide; infrared plasmonics; band gap; carrier effective mass; monochromated electron energy-loss spectroscopy; inhomogeneity

Key words in English

doped semiconductor; high-mobility oxide; infrared plasmonics; band gap; carrier effective mass; monochromated electron energy-loss spectroscopy; inhomogeneity

Authors

YANG, H.; KONEČNÁ, A.; XU, X.; CHEONG, S. W.; BATSON, P. E.; GARCÍA DE ABAJO, F. J.; GARFUNKEL, E.

RIV year

2023

Released

18.11.2022

Publisher

AMER CHEMICAL SOC

Location

WASHINGTON

ISBN

1936-086X

Periodical

ACS Nano

Volume

16

Number

11

State

United States of America

Pages from

1

Pages to

11

Pages count

11

URL

http://pubs.acs.org/doi/10.1021/acsnano.2c07540

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@article{BUT180791,
  author="YANG, H. and KONEČNÁ, A. and XU, X. and CHEONG, S. W. and BATSON, P. E. and GARCÍA DE ABAJO, F. J. and GARFUNKEL, E.",
  title="Simultaneous Imaging of Dopants and Free Charge Carriers by Monochromated EELS",
  journal="ACS Nano",
  year="2022",
  volume="16",
  number="11",
  pages="1--11",
  doi="10.1021/acsnano.2c07540",
  issn="1936-0851",
  url="http://pubs.acs.org/doi/10.1021/acsnano.2c07540"
}