Publication result detail

Ga interaction with ZnO surfaces: Diffusion and melt-back etching

PEJCHAL, T.; BUKVIŠOVÁ, K.; VALLEJOS VARGAS, S.; CITTERBERG, D.; ŠIKOLA, T.; KOLÍBAL, M.

Original Title

Ga interaction with ZnO surfaces: Diffusion and melt-back etching

English Title

Ga interaction with ZnO surfaces: Diffusion and melt-back etching

Type

WoS Article

Original Abstract

Despite being technologically very attractive, highly-doped zinc oxide whiskers with precisely defined morphology and doping level are difficult to prepare. Here, as an advancing step towards this goal, we show that pre-annealing of ZnO in oxygen-poor conditions (e.g. high vacuum) at low temperature encourages a deeper diffusion of Ga into the ZnO crystal lattice in contrast to ZnO pre-annealed in oxygen-rich conditions. We also demonstrate that gallium acts as a reactant causing ZnO etching at diffusion temperatures, contrary to Al-based doping of ZnO systems. This behaviour, being similar to gallium melt-back etching during GaN epitaxy on silicon, has not been observed for ZnO so far and can represent a significant hurdle for the post-growth diffusion doping of ZnO nanostructures. The paper suggests possible ways how to diminish this effect.

English abstract

Despite being technologically very attractive, highly-doped zinc oxide whiskers with precisely defined morphology and doping level are difficult to prepare. Here, as an advancing step towards this goal, we show that pre-annealing of ZnO in oxygen-poor conditions (e.g. high vacuum) at low temperature encourages a deeper diffusion of Ga into the ZnO crystal lattice in contrast to ZnO pre-annealed in oxygen-rich conditions. We also demonstrate that gallium acts as a reactant causing ZnO etching at diffusion temperatures, contrary to Al-based doping of ZnO systems. This behaviour, being similar to gallium melt-back etching during GaN epitaxy on silicon, has not been observed for ZnO so far and can represent a significant hurdle for the post-growth diffusion doping of ZnO nanostructures. The paper suggests possible ways how to diminish this effect.

Keywords

ZnO whiskers; Gallium; Diffusion doping; Melt-back etching; XPS; Oxygen vacancy

Key words in English

ZnO whiskers; Gallium; Diffusion doping; Melt-back etching; XPS; Oxygen vacancy

Authors

PEJCHAL, T.; BUKVIŠOVÁ, K.; VALLEJOS VARGAS, S.; CITTERBERG, D.; ŠIKOLA, T.; KOLÍBAL, M.

RIV year

2022

Released

01.05.2022

ISBN

0169-4332

Periodical

APPLIED SURFACE SCIENCE

Volume

583

Number

1

State

Kingdom of the Netherlands

Pages from

152475

Pages to

152475

Pages count

6

URL

https://doi.org/10.1016/j.apsusc.2022.152475

BibTex

@article{BUT176542,
  author="Tomáš {Pejchal} and Kristýna {Bukvišová} and Stella {Vallejos Vargas} and Daniel {Citterberg} and Tomáš {Šikola} and Miroslav {Kolíbal}",
  title="Ga interaction with ZnO surfaces: Diffusion and melt-back etching",
  journal="APPLIED SURFACE SCIENCE",
  year="2022",
  volume="583",
  number="1",
  pages="152475--152475",
  doi="10.1016/j.apsusc.2022.152475",
  issn="0169-4332",
  url="https://doi.org/10.1016/j.apsusc.2022.152475"
}