Publication detail

Efficiency optimization of totem pole PFC with Gallium Nitride semiconductors

ŠÍR, M. FENO, I.

Original Title

Efficiency optimization of totem pole PFC with Gallium Nitride semiconductors

Type

journal article in Web of Science

Language

English

Original Abstract

Novel Gallium Nitride wide bandgap semiconductor devices are capable of improving efficiency of power converters. This article presents a practical optimisation of GaN converter application in the totem-pole power factor conversion converter. As the bottom side cooled devices are used, the article shows integration of switching device and gate driver on a single insulated metal substrate board, attractive for high power density power supply solutions. Measured efficiency data together with analysis of losses distribution and optimization at specific operating conditions are included. Design files of printed circuit board, created in free tool KiCad, used for evaluated prototype are part of this publication.

Keywords

power electronics; GaN; GaN totem pole; GaN efficiency optimization; GaN cooling; GaN on insulated metal substrate IMS

Authors

ŠÍR, M.; FENO, I.

Released

1. 6. 2021

Publisher

WYDAWNICTWO SIGMA-NOT

Location

WARSAW

ISBN

0033-2097

Periodical

Przeglad Elektrotechniczny

Year of study

2021

Number

6

State

Republic of Poland

Pages from

39

Pages to

43

Pages count

5

URL

http://pe.org.pl/abstract_pl.php?nid=12596&lang=1

Full text in the Digital Library

http://hdl.handle.net/11012/203016

BibTex

@article{BUT170916,
  author="Michal {Šír} and Ivan {Feno}",
  title="Efficiency optimization of totem pole PFC with Gallium Nitride semiconductors",
  journal="Przeglad Elektrotechniczny",
  year="2021",
  volume="2021",
  number="6",
  pages="39--43",
  doi="10.15199/48.2021.06.07",
  issn="0033-2097",
  url="http://pe.org.pl/abstract_pl.php?nid=12596&lang=1"
}