Thermal-Dynamics Optimization of Terahertz Quantum Cascade Lasers with Different Barrier Compositions

Thermal-Dynamics Optimization of Terahertz Quantum Cascade Lasers with Different Barrier Compositions

WoS Article

The interplay of high operating temperatures and good heat dissipation is crucial for high-performance terahertz quantum cascade lasers. We therefore study the influence on the cross-plane thermal conductivity of different aluminum concentrations in the barrier of GaAs/AlxGa1-xAs active regions. The thermal conductivity is decreasing from 30 W K-1 m(-1) to 12 W K-1 m(-1) if the aluminum concentration is increased from 15% to 24%. The temperature during pulsed-laser operation is obtained by measuring the variation of the emission frequency for different laser pulse lengths. This shows, that besides the thermal conductivity, the amount of electric input power has a strong influence on the temperature reached internally during laser operation and is critical for creating high-power devices operating at high temperatures. We show that active regions with thin but high AlxGa1-xAs barriers fulfill this need and are well suited for high-temperature operation. A thermal model of the devices allows prediction of the active-region temperature increase for very short pulse durations. For the structure with 24% Al barriers and a starting temperature of 10 K, the model shows an increase by 24 K for a pulse length of only 300 ns.

The interplay of high operating temperatures and good heat dissipation is crucial for high-performance terahertz quantum cascade lasers. We therefore study the influence on the cross-plane thermal conductivity of different aluminum concentrations in the barrier of GaAs/AlxGa1-xAs active regions. The thermal conductivity is decreasing from 30 W K-1 m(-1) to 12 W K-1 m(-1) if the aluminum concentration is increased from 15% to 24%. The temperature during pulsed-laser operation is obtained by measuring the variation of the emission frequency for different laser pulse lengths. This shows, that besides the thermal conductivity, the amount of electric input power has a strong influence on the temperature reached internally during laser operation and is critical for creating high-power devices operating at high temperatures. We show that active regions with thin but high AlxGa1-xAs barriers fulfill this need and are well suited for high-temperature operation. A thermal model of the devices allows prediction of the active-region temperature increase for very short pulse durations. For the structure with 24% Al barriers and a starting temperature of 10 K, the model shows an increase by 24 K for a pulse length of only 300 ns.

HIGH-TEMPERATURE; CONDUCTIVITY; RESISTANCE; GAAS

HIGH-TEMPERATURE; CONDUCTIVITY; RESISTANCE; GAAS

KAINZ, M.; WENCLAWIAK, M.; SCHÖNHUBER, S.; JAIDL, M.; LIMBACHER, B.; ANDREWS, A.; DETZ, H.; STRASSER, G.; UNTERRAINER, K.

2022

06.11.2020

AMER PHYSICAL SOC

COLLEGE PK

2331-7019

Physical Review Applied

14

5

United States of America

054102-1

054101-7

7

https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.14.054012