Publication result detail

Aluminum nitride based piezoelectric harvesters

GABLECH, I.; KLEMPA, J.; PEKÁREK, J.; VYROUBAL, P.; KUNZ, J.; NEUŽIL, P.

Original Title

Aluminum nitride based piezoelectric harvesters

English Title

Aluminum nitride based piezoelectric harvesters

Type

Paper in proceedings (conference paper)

Original Abstract

This work demonstrates the fabrication of simple of AlN-based piezoelectric energy harvesters (PEH), made of cantilevers with thin films prepared by ion beam-assisted deposition. The preferentially (001) orientated AlN thin films have exceptionally high piezoelectric coefficients of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was done using only three lithography steps, employing conventional silicon substrate with precise control of the cantilever and it's mass thicknesses. The AlN deposition was done at a temperature of approximate to 330 degrees C which makes it compatible with complementary metal oxide semiconductor technology (CMOS). The PEH cantilever deflection and efficiency were characterized using both laser interferometry and a vibration shaker, respectively. This technology could become useful for future CMOS-based energy harvesters integrated on chip with circuits.

English abstract

This work demonstrates the fabrication of simple of AlN-based piezoelectric energy harvesters (PEH), made of cantilevers with thin films prepared by ion beam-assisted deposition. The preferentially (001) orientated AlN thin films have exceptionally high piezoelectric coefficients of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was done using only three lithography steps, employing conventional silicon substrate with precise control of the cantilever and it's mass thicknesses. The AlN deposition was done at a temperature of approximate to 330 degrees C which makes it compatible with complementary metal oxide semiconductor technology (CMOS). The PEH cantilever deflection and efficiency were characterized using both laser interferometry and a vibration shaker, respectively. This technology could become useful for future CMOS-based energy harvesters integrated on chip with circuits.

Keywords

MEMS, Harvesters, AlN

Key words in English

MEMS, Harvesters, AlN

Authors

GABLECH, I.; KLEMPA, J.; PEKÁREK, J.; VYROUBAL, P.; KUNZ, J.; NEUŽIL, P.

RIV year

2021

Released

02.12.2019

Publisher

IEEE

Location

NEW YORK

ISBN

978-1-7281-5638-5

Book

19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS) Conference Proceedings

Pages from

1

Pages to

4

Pages count

4

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@inproceedings{BUT166135,
  author="Imrich {Gablech} and Jaroslav {Klempa} and Jan {Pekárek} and Petr {Vyroubal} and Jan {Kunz} and Pavel {Neužil}",
  title="Aluminum nitride based piezoelectric harvesters",
  booktitle="19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS)  Conference Proceedings",
  year="2019",
  pages="1--4",
  publisher="IEEE",
  address="NEW YORK",
  isbn="978-1-7281-5638-5"
}