Publication result detail

Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

HERCEG, E.

Original Title

Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

English Title

Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

Type

Paper in proceedings outside WoS and Scopus

Original Abstract

This article deals with the extrinsic and intrinsic parameters of the Galium-Nitride RF transistor. These parameters are essential in any design of large-signal analysis of RF amplifiers. Package parasitics are the biggest problem of integrated circuits (ICs), especially at high frequencies. Each IC package gives unwanted parasitics to the primary function of the IC. The analysis of these package parasitics can be performed by the transistor manufacturer, which provides a non-linear model of the transistor, where parasitics elements are separated from the transistor. With these sep-arated package parasitics, the highest efficiency, power output, and accurate harmonic termination can be achieved. The main purpose of this article is to describe these problems.

English abstract

This article deals with the extrinsic and intrinsic parameters of the Galium-Nitride RF transistor. These parameters are essential in any design of large-signal analysis of RF amplifiers. Package parasitics are the biggest problem of integrated circuits (ICs), especially at high frequencies. Each IC package gives unwanted parasitics to the primary function of the IC. The analysis of these package parasitics can be performed by the transistor manufacturer, which provides a non-linear model of the transistor, where parasitics elements are separated from the transistor. With these sep-arated package parasitics, the highest efficiency, power output, and accurate harmonic termination can be achieved. The main purpose of this article is to describe these problems.

Keywords

GaN Transistor, Waveforms, Extrinsic, Intrinsic, Load-Pull, Source-Pull, Radio-Fre-quency, Transistor Parasitics

Key words in English

GaN Transistor, Waveforms, Extrinsic, Intrinsic, Load-Pull, Source-Pull, Radio-Fre-quency, Transistor Parasitics

Authors

HERCEG, E.

RIV year

2021

Released

23.04.2020

Publisher

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií

Location

Brno

ISBN

978-80-214-5867-3

Book

Proceedings of the 26th Conference STUDENT EEICT 2020

Pages from

314

Pages to

318

Pages count

5

BibTex

@inproceedings{BUT164907,
  author="Erik {Herceg}",
  title="Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors",
  booktitle="Proceedings of the 26th Conference STUDENT EEICT 2020",
  year="2020",
  pages="314--318",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií",
  address="Brno",
  isbn="978-80-214-5867-3"
}