Publication result detail

Depozice pasivačních vrstev SiNx a SiO2.

HÉGR, O.; BOUŠEK, J.

Original Title

Depozice pasivačních vrstev SiNx a SiO2.

English Title

Deposition of SiNx and SiO2 passivation layers.

Type

Paper in proceedings (conference paper)

Original Abstract

In the semiconductor and photovoltaic application, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centers that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition). In this paper, deposition of the passivation layers by means of reactive magnetron sputtering is dealt.

English abstract

In the semiconductor and photovoltaic application, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centers that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition). In this paper, deposition of the passivation layers by means of reactive magnetron sputtering is dealt.

Keywords

povrchová pasivace, solární články, depozice SiN

Key words in English

surface passivation, deposition

Authors

HÉGR, O.; BOUŠEK, J.

Released

12.12.2005

Publisher

nakl. Z. Novotný

Location

Brno

ISBN

80-214-3116-4

Book

Mikrosyn. Nové trendy v mikroelektronických systémech a nanotechnologiích

Volume

2005

Number

1

Pages from

111

Pages count

6

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@inproceedings{BUT16434,
  author="Ondřej {Hégr} and Jaroslav {Boušek}",
  title="Depozice pasivačních vrstev SiNx a SiO2.",
  booktitle="Mikrosyn. Nové trendy v mikroelektronických systémech a nanotechnologiích",
  year="2005",
  volume="2005",
  number="1",
  pages="6",
  publisher="nakl. Z. Novotný",
  address="Brno",
  isbn="80-214-3116-4"
}