Universal power sequencer for RF power amplifiers

Universal power sequencer for RF power amplifiers

Paper in proceedings outside WoS and Scopus

More often used Gallium Nitride (GaN) based Radio-Frequency high power transistors in the various RF configuration w.g. Doherty is by their nature easily destroyed, great care must be taken, when powering-up and shutting down this circuits. That means, proper power biasing and sequencing is necessary. The Doherty type RF PA with RF drivers four differnet gate, drain voltages and time when when the individual voltages ate turned on and off must be controled. Universal power sequencer and biasing device, which meets this requirements is described.

More often used Gallium Nitride (GaN) based Radio-Frequency high power transistors in the various RF configuration w.g. Doherty is by their nature easily destroyed, great care must be taken, when powering-up and shutting down this circuits. That means, proper power biasing and sequencing is necessary. The Doherty type RF PA with RF drivers four differnet gate, drain voltages and time when when the individual voltages ate turned on and off must be controled. Universal power sequencer and biasing device, which meets this requirements is described.

GaN, RF PA, Biasing, Power sequencing

GaN, RF PA, Biasing, Power sequencing

WALDECKER, M.

2021

06.05.2020

Vysoké učení technické v Brně, Fakulta elektrotechniky a informačních technologií

978-80-214-5868-0

Proceedings II of the 26th Conference STUDENT EEICT 2020

126

130

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