Publication result detail

Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

DALLAEV, R.; PAPEŽ, N.; SOBOLA, D.; RAMAZANOV, S.; SEDLÁK, P.

Original Title

Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

English Title

Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

Type

Paper in proceedings (conference paper)

Original Abstract

This study focuses on structural imperfections caused by hydrogen impurities in AlN thin films obtained using atomic layer deposition method (ALD). Currently, there is a severe lack of studies regarding the presence of hydrogen in the bulk of AlN films. Fourier-transform infrared spectroscopy (FTIR) is one of the few methods that allow detection bonds of light elements, in particular - hydrogen. Hydrogen is known to be a frequent contaminant in AlN films grown by ALD method, it may form different bonds with nitrogen, e.g. amino (–NH2) or imide (–NH) groups, which impair the quality of the resulting film. Which is why, it is important to investigate the phenomenon of hydrogen as well as to search for the suitable methods to eliminate or at least reduce its quantity. In this work several samples have been prepared using different precursors, substrates and deposition parameters and characterized using FTIR and additional techniques such as AFM, XPS and EDS to provide a comparative and comprehensive analysis of topography, morphology and chemical composition of AlN thin films.

English abstract

This study focuses on structural imperfections caused by hydrogen impurities in AlN thin films obtained using atomic layer deposition method (ALD). Currently, there is a severe lack of studies regarding the presence of hydrogen in the bulk of AlN films. Fourier-transform infrared spectroscopy (FTIR) is one of the few methods that allow detection bonds of light elements, in particular - hydrogen. Hydrogen is known to be a frequent contaminant in AlN films grown by ALD method, it may form different bonds with nitrogen, e.g. amino (–NH2) or imide (–NH) groups, which impair the quality of the resulting film. Which is why, it is important to investigate the phenomenon of hydrogen as well as to search for the suitable methods to eliminate or at least reduce its quantity. In this work several samples have been prepared using different precursors, substrates and deposition parameters and characterized using FTIR and additional techniques such as AFM, XPS and EDS to provide a comparative and comprehensive analysis of topography, morphology and chemical composition of AlN thin films.

Keywords

thin-films, aluminum nitride, Fourier-transform infrared spectroscopy, hydrogen impurities, structural analysis

Key words in English

thin-films, aluminum nitride, Fourier-transform infrared spectroscopy, hydrogen impurities, structural analysis

Authors

DALLAEV, R.; PAPEŽ, N.; SOBOLA, D.; RAMAZANOV, S.; SEDLÁK, P.

RIV year

2021

Released

19.02.2020

Publisher

Elsevier

Book

Procedia Structural Integrity

ISBN

2452-3216

Periodical

Procedia Structural Integrity

Volume

23

Number

1

State

Republic of Italy

Pages from

601

Pages to

606

Pages count

6

URL

https://www.sciencedirect.com/science/article/pii/S2452321620302195

Full text in the Digital Library

http://hdl.handle.net/11012/193488

BibTex

@inproceedings{BUT162370,
  author="Rashid {Dallaev} and Nikola {Papež} and Dinara {Sobola} and Shihgasan {Ramazanov} and Petr {Sedlák}",
  title="Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy",
  booktitle="Procedia Structural Integrity",
  year="2020",
  journal="Procedia Structural Integrity",
  volume="23",
  number="1",
  pages="601--606",
  publisher="Elsevier",
  doi="10.1016/j.prostr.2020.01.152",
  issn="2452-3216",
  url="https://www.sciencedirect.com/science/article/pii/S2452321620302195"
}

Documents

1-s2.0-S2452321620302195-main