The formation-properties of porous-alumina-embedded hafnium-oxide nanorod arrays

The formation-properties of porous-alumina-embedded hafnium-oxide nanorod arrays

Paper in proceedings (conference paper)

Hafnium-oxide film with the self-organized nanostructured 3-dimentional architecture is synthesized via the anodizing of thin Al-Hf layers in a phosphoric acid electrolyte. The process involves the growth of a porous alumina film, followed by pore-assisted oxidation of the Hf underlayer. The film consists of HfOx nanorods anchored to continuous hafnium-oxide bottom layer that forms under the pores. Post-anodizing treatments include annealing at 600C in air or vacuum. From the EIS measurements and Mott-Schottky analysis of the as anodized and air-annealed films, the bottom oxide behaves as a good dielectric whereas the nanorods exhibit semiconducting properties. The annealing in vacuum makes the film fully semiconducting, with a unique gradient in film crystal structure, composition, and properties across the film thickness. Potential applications are as dielectrics for electrolytic or on-chip capacitors, and as active layers for gas microsensors

Hafnium-oxide film with the self-organized nanostructured 3-dimentional architecture is synthesized via the anodizing of thin Al-Hf layers in a phosphoric acid electrolyte. The process involves the growth of a porous alumina film, followed by pore-assisted oxidation of the Hf underlayer. The film consists of HfOx nanorods anchored to continuous hafnium-oxide bottom layer that forms under the pores. Post-anodizing treatments include annealing at 600C in air or vacuum. From the EIS measurements and Mott-Schottky analysis of the as anodized and air-annealed films, the bottom oxide behaves as a good dielectric whereas the nanorods exhibit semiconducting properties. The annealing in vacuum makes the film fully semiconducting, with a unique gradient in film crystal structure, composition, and properties across the film thickness. Potential applications are as dielectrics for electrolytic or on-chip capacitors, and as active layers for gas microsensors

anodizing, porous anodic alumina, hafnium oxide, nanostructure, dielectric, semiconductor, capacitor

anodizing, porous anodic alumina, hafnium oxide, nanostructure, dielectric, semiconductor, capacitor

MOZALEV, A.; BENDOVÁ, M.; PYTLÍČEK, Z.; LLOBET, E.

2020

24.06.2019

University of Zilina in EDIS - Publishing Centre of UZ

Zilina, Slobak republic

978-80-554-1568-0

Proceedings of 7th International Conference on ADVANCES IN ELECTRONIC AND PHOTONIC TECHNOLOGIES

D. Jandura, Ľ. Šušlik, P. Urbancová, J. Kováč

19

22

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