The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning

The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning

WoS Article

We have studied the growth of metastable face-centered-cubic, non-magnetic Fe78Ni22 thin films on silicon substrates. These films undergo a magnetic (paramagnetic to ferromagnetic) and structural (fcc to bcc) phase transformation upon ion beam irradiation and thus can serve as a material for direct writing of magnetic nanostructures by the focused ion beam. So far, these films were prepared only on single-crystal Cu(1 0 0) substrates. We show that transformable Fe78Ni22 thin films can also be prepared on a hydrogen-terminated Si(1 0 0) with a 130-nm-thick Cu(1 0 0) buffer layer. The H-Si(1 0 0) substrates can be prepared by hydrofluoric acid etching or by annealing at 1200 degrees C followed by adsorption of atomic hydrogen. The Cu(1 0 0) buffer layer and Fe78Ni22 fcc metastable thin film were deposited by thermal evaporation in ultra-high vacuum. The films were consequently transformed in-situ by 4 keV Ar+ ion irradiation and ex-situ by a 30 keV Ga+ focused ion beam, and their magnetic properties were studied by magneto-optical Kerr effect magnetometry. The substitution of expensive copper single crystal substrate by standard silicon wafers dramatically expands application possibilities of metastable paramagnetic thin films for focused-ion-beam direct magnetic patterning.

We have studied the growth of metastable face-centered-cubic, non-magnetic Fe78Ni22 thin films on silicon substrates. These films undergo a magnetic (paramagnetic to ferromagnetic) and structural (fcc to bcc) phase transformation upon ion beam irradiation and thus can serve as a material for direct writing of magnetic nanostructures by the focused ion beam. So far, these films were prepared only on single-crystal Cu(1 0 0) substrates. We show that transformable Fe78Ni22 thin films can also be prepared on a hydrogen-terminated Si(1 0 0) with a 130-nm-thick Cu(1 0 0) buffer layer. The H-Si(1 0 0) substrates can be prepared by hydrofluoric acid etching or by annealing at 1200 degrees C followed by adsorption of atomic hydrogen. The Cu(1 0 0) buffer layer and Fe78Ni22 fcc metastable thin film were deposited by thermal evaporation in ultra-high vacuum. The films were consequently transformed in-situ by 4 keV Ar+ ion irradiation and ex-situ by a 30 keV Ga+ focused ion beam, and their magnetic properties were studied by magneto-optical Kerr effect magnetometry. The substitution of expensive copper single crystal substrate by standard silicon wafers dramatically expands application possibilities of metastable paramagnetic thin films for focused-ion-beam direct magnetic patterning.

Magnetic nanostructures; Metastable films; fcc Fe; Cu buffer layer; Si(100)

Magnetic nanostructures; Metastable films; fcc Fe; Cu buffer layer; Si(100)

GLOSS, J.; HORKÝ, M.; KŘIŽÁKOVÁ, V.; FLAJŠMAN, L.; SCHMID, M.; URBÁNEK, M.; VARGA, P.

2019

01.03.2019

Elsevier

0169-4332

APPLIED SURFACE SCIENCE

469

1

Kingdom of the Netherlands

747

752

6

https://www.sciencedirect.com/science/article/pii/S0169433218330459?via%3Dihub

http://hdl.handle.net/11012/180697

The growth of metastable fcc - full