Publication result detail

Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

PAPEŽ, N.; SOBOLA, D.; GAJDOŠ, A.; ŠKVARENINA, Ľ.; MACKŮ, R.; ELIÁŠ, M.; NEBOJSA, A.; MOTÚZ, R.

Original Title

Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

English Title

Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

Type

Scopus Article

Original Abstract

This work aims to study the surface morphology of solar cells before and after reactive ion etching (RIE) at two different pressures. Two types of solar cell based on GaAs and polycrystalline Si were processed and compared. The Scanning Electron Microscope (SEM) with the Energy Dispersive X-ray spectroscopy (EDX) was used for analysis of the samples. Raman spectroscopy showed a structural fingerprint of materials before and after processing. Atomic Force Microscope (AFM) demonstrated dimensional topography with high resolution. Optical spectrometer detected changing of reflectance the samples. Experimentally, it has been confirmed that GaAs solar cells have a very high endurance to ion bombardment in comparison to Si cells.

English abstract

This work aims to study the surface morphology of solar cells before and after reactive ion etching (RIE) at two different pressures. Two types of solar cell based on GaAs and polycrystalline Si were processed and compared. The Scanning Electron Microscope (SEM) with the Energy Dispersive X-ray spectroscopy (EDX) was used for analysis of the samples. Raman spectroscopy showed a structural fingerprint of materials before and after processing. Atomic Force Microscope (AFM) demonstrated dimensional topography with high resolution. Optical spectrometer detected changing of reflectance the samples. Experimentally, it has been confirmed that GaAs solar cells have a very high endurance to ion bombardment in comparison to Si cells.

Keywords

gallium arsenide, ion etching, rie, silicon, afm

Key words in English

gallium arsenide, ion etching, rie, silicon, afm

Authors

PAPEŽ, N.; SOBOLA, D.; GAJDOŠ, A.; ŠKVARENINA, Ľ.; MACKŮ, R.; ELIÁŠ, M.; NEBOJSA, A.; MOTÚZ, R.

RIV year

2019

Released

01.12.2018

Publisher

IOP Publishing Ltd

Book

Journal of Physics: Conference Series

ISBN

1742-6596

Periodical

Journal of Physics: Conference Series

Volume

1124

Number

4

State

United Kingdom of Great Britain and Northern Ireland

Pages from

165

Pages to

171

Pages count

6

URL

http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041015

BibTex

@article{BUT151859,
  author="Nikola {Papež} and Dinara {Sobola} and Adam {Gajdoš} and Ľubomír {Škvarenina} and Robert {Macků} and Marek {Eliáš} and Alois {Nebojsa} and Rastislav {Motúz}",
  title="Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells",
  journal="Journal of Physics: Conference Series",
  year="2018",
  volume="1124",
  number="4",
  pages="165--171",
  doi="10.1088/1742-6596/1124/4/041015",
  issn="1742-6596",
  url="http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041015"
}