Publication result detail

Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual kaufman ion-beam source setup

GABLECH, I.; SVATOŠ, V.; CAHA, O.; DUBROKA, A.; PEKÁREK, J.; KLEMPA, J.; NEUŽIL, P.; SCHNEIDER, M.; ŠIKOLA, T.

Original Title

Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual kaufman ion-beam source setup

English Title

Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual kaufman ion-beam source setup

Type

WoS Article

Original Abstract

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 °C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d33 = (7.33 ± 0.08) pC·N−1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.

English abstract

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 °C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d33 = (7.33 ± 0.08) pC·N−1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.

Keywords

Ion-beam sputtering deposition; Kaufman ion-beam source; Aluminum nitride thin film; (001) preferential orientation; X-ray diffraction; Optical properties; Ellipsometry; d33 piezoelectric coefficient

Key words in English

Ion-beam sputtering deposition; Kaufman ion-beam source; Aluminum nitride thin film; (001) preferential orientation; X-ray diffraction; Optical properties; Ellipsometry; d33 piezoelectric coefficient

Authors

GABLECH, I.; SVATOŠ, V.; CAHA, O.; DUBROKA, A.; PEKÁREK, J.; KLEMPA, J.; NEUŽIL, P.; SCHNEIDER, M.; ŠIKOLA, T.

RIV year

2019

Released

31.01.2019

Publisher

ELSEVIER SCIENCE SA

Location

LAUSANNE, SWITZERLAND

ISBN

0040-6090

Periodical

Thin Solid Films

Volume

670

Number

NA

State

Kingdom of the Netherlands

Pages from

105

Pages to

112

Pages count

8

URL

https://www.sciencedirect.com/science/article/pii/S0040609018308447?via%3Dihub

BibTex

@article{BUT151843,
  author="GABLECH, I. and SVATOŠ, V. and CAHA, O. and DUBROKA, A. and PEKÁREK, J. and KLEMPA, J. and NEUŽIL, P. and SCHNEIDER, M. and ŠIKOLA, T.",
  title="Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual kaufman ion-beam source setup",
  journal="Thin Solid Films",
  year="2019",
  volume="670",
  number="NA",
  pages="105--112",
  doi="10.1016/j.tsf.2018.12.035",
  issn="0040-6090",
  url="https://www.sciencedirect.com/science/article/pii/S0040609018308447?via%3Dihub"
}