Publication result detail

Ambipolar remote graphene doping by low-energy electron beam irradiation

STARÁ, V.; PROCHÁZKA, P.; MAREČEK, D.; ŠIKOLA, T.; ČECHAL, J.

Original Title

Ambipolar remote graphene doping by low-energy electron beam irradiation

English Title

Ambipolar remote graphene doping by low-energy electron beam irradiation

Type

WoS Article

Original Abstract

We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved

English abstract

We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved

Keywords

Graphene, Field effect transistors, graphene transistors

Key words in English

Graphene, Field effect transistors, graphene transistors

Authors

STARÁ, V.; PROCHÁZKA, P.; MAREČEK, D.; ŠIKOLA, T.; ČECHAL, J.

RIV year

2019

Released

07.10.2018

ISBN

2040-3372

Periodical

Nanoscale

Volume

10

Number

37

State

United Kingdom of Great Britain and Northern Ireland

Pages from

17520

Pages to

17524

Pages count

5

BibTex

@article{BUT150300,
  author="Veronika {Stará} and Pavel {Procházka} and David {Mareček} and Tomáš {Šikola} and Jan {Čechal}",
  title="Ambipolar remote graphene doping by low-energy electron beam irradiation",
  journal="Nanoscale",
  year="2018",
  volume="10",
  number="37",
  pages="17520--17524",
  doi="10.1039/c8nr06483k",
  issn="2040-3364"
}