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BIOLEK, D.; BIOLEK, Z.; BIOLKOVÁ, V.; ASCOLI, A.; TETZLAFF, R.
Original Title
About v-i Pinched Hysteresis of Some Non-Memristive Systems
English Title
Type
WoS Article
Original Abstract
A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device. This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.
English abstract
Keywords
pinched hysteresis; memristor; inverse memristor; constitutive relation; inductor; capacitor
Key words in English
Authors
RIV year
2019
Released
24.09.2018
Publisher
Hindawi
Location
USA
ISBN
1024-123X
Periodical
MATHEMATICAL PROBLEMS IN ENGINEERING
Volume
2018
Number
1
State
United States of America
Pages from
Pages to
10
Pages count
URL
http://dx.doi.org/10.1155/2018/1747865
Full text in the Digital Library
http://hdl.handle.net/11012/193102
BibTex
@article{BUT150098, author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková} and Alon {Ascoli} and Ronald {Tetzlaff}", title="About v-i Pinched Hysteresis of Some Non-Memristive Systems", journal="MATHEMATICAL PROBLEMS IN ENGINEERING", year="2018", volume="2018", number="1", pages="1--10", doi="10.1155/2018/1747865", issn="1024-123X", url="http://dx.doi.org/10.1155/2018/1747865" }
Documents
1747865