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METIN, B.; HERENCSÁR, N.; CICEKOGLU, O.
Original Title
Memristor Emulator Applications Using the MOS-Only Technique
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
The aim of this paper is to present a work towards a MOS transistor memristor emulator. The starting circuit employs an opamp, negative capacitors and loaded with a nonlinear resistor. The final aim is to design a memristor with only MOS transistors which is easily integrable. To implement the negative capacitance several possible potential circuit examples of MOS-Only type are given. These capacitors realize floating negative capacitances and the ac small signal form is shown. Some simulation results are included to verify theory.
English abstract
Keywords
memristor emulation; MOS-only; negative capacitance simulator; two-port network
Key words in English
Authors
RIV year
2019
Released
05.08.2018
Publisher
IEEE
Location
Windsor, Canada
ISBN
978-1-5386-7392-8
Book
Proceedings of the 2018 61st IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)
Pages from
254
Pages to
257
Pages count
4
URL
https://ieeexplore.ieee.org/document/8623837
Full text in the Digital Library
http://hdl.handle.net/11012/194805
BibTex
@inproceedings{BUT149088, author="Bilgin {Metin} and Norbert {Herencsár} and Oguzhan {Cicekoglu}", title="Memristor Emulator Applications Using the MOS-Only Technique", booktitle="Proceedings of the 2018 61st IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)", year="2018", pages="254--257", publisher="IEEE", address="Windsor, Canada", doi="10.1109/MWSCAS.2018.8623837", isbn="978-1-5386-7392-8", url="https://ieeexplore.ieee.org/document/8623837" }
Documents
2018 Memristor Emulator Applications using the MOS-Only TechniqueMemristor-Emulator-VUT