Publication result detail

High Efficiency Classes of RF Amplifiers

HERCEG, E.; URBANEC, T.

Original Title

High Efficiency Classes of RF Amplifiers

English Title

High Efficiency Classes of RF Amplifiers

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

This article is dealing with high efficiency RF amplifiers in modern classes F, E and J. The first part is focused on basic function, main parameters and the output matching topologies of the mentioned classes. Output voltage and current waveforms were simulated for each class of high efficiency amplifiers. The primary focus of this work is the practical design of class F amplifier for 435 MHz band with E-pHEMT transistor. Power added efficiency (PAE) of amplifier achieved 58% and output power was 27 dBm with 14 dBm of input power. Amplifier was realized exclusively with lumped components in order to adhere to the given dimensions. Class F amplifiers designed at megahertz frequencies and with E-pHEMT transistor are quite rare and this article could help designers with understanding narrowband F-class amplifiers with higher efficiency. This amplifier can be used in long range IoT application, because of its low consumption of energy which is necessary in this modern technology. All results were simulated within ADS Keysight environment. Every simulation was realized with nonlinear models from Modelithics.

English abstract

This article is dealing with high efficiency RF amplifiers in modern classes F, E and J. The first part is focused on basic function, main parameters and the output matching topologies of the mentioned classes. Output voltage and current waveforms were simulated for each class of high efficiency amplifiers. The primary focus of this work is the practical design of class F amplifier for 435 MHz band with E-pHEMT transistor. Power added efficiency (PAE) of amplifier achieved 58% and output power was 27 dBm with 14 dBm of input power. Amplifier was realized exclusively with lumped components in order to adhere to the given dimensions. Class F amplifiers designed at megahertz frequencies and with E-pHEMT transistor are quite rare and this article could help designers with understanding narrowband F-class amplifiers with higher efficiency. This amplifier can be used in long range IoT application, because of its low consumption of energy which is necessary in this modern technology. All results were simulated within ADS Keysight environment. Every simulation was realized with nonlinear models from Modelithics.

Keywords

Amplifier, efficiency, resonant circuits, class F

Key words in English

Amplifier, efficiency, resonant circuits, class F

Authors

HERCEG, E.; URBANEC, T.

RIV year

2019

Released

28.02.2018

Publisher

International Science and Engineering Society

Location

Brno

ISBN

1213-1539

Periodical

Elektrorevue - Internetový časopis (http://www.elektrorevue.cz)

Volume

20

Number

2

State

Czech Republic

Pages from

1

Pages to

5

Pages count

5

URL

http://www.elektrorevue.cz/cz/clanky/komunikacni-technologie/0/high-efficiency-classes-of-rf-amplifiers/

Full text in the Digital Library

http://hdl.handle.net/11012/72427

BibTex

@article{BUT147405,
  author="Erik {Herceg} and Tomáš {Urbanec}",
  title="High Efficiency Classes of RF Amplifiers",
  journal="Elektrorevue - Internetový časopis (http://www.elektrorevue.cz)",
  year="2018",
  volume="20",
  number="2",
  pages="1--5",
  issn="1213-1539",
  url="http://www.elektrorevue.cz/cz/clanky/komunikacni-technologie/0/high-efficiency-classes-of-rf-amplifiers/"
}

Documents

clanek_01_28.02.2018