Detail publikačního výsledku

Growth of gallium on sillicon: A TOF-LEIS and AFM study

KOLÍBAL, M., PRŮŠA, S., BÁBOR, P., BARTOŠÍK, M., TOMANEC, O., ŠIKOLA, T.

Original Title

Growth of gallium on sillicon: A TOF-LEIS and AFM study

English Title

Growth of gallium on sillicon: A TOF-LEIS and AFM study

Type

Paper in proceedings (conference paper)

Original Abstract

Growth of gallium on sillicon: A TOF-LEIS and AFM study

English abstract

Growth of gallium on sillicon: A TOF-LEIS and AFM study

Key words in English

Ga, TOF, structural analysis, AFM

Authors

KOLÍBAL, M., PRŮŠA, S., BÁBOR, P., BARTOŠÍK, M., TOMANEC, O., ŠIKOLA, T.

Released

11.11.2004

Publisher

VUT v Brně

Location

Brno

ISBN

80-7355-024-5

Book

New Trend in Physics

Pages from

230

Pages count

4

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@inproceedings{BUT14279,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Miroslav {Bartošík} and Ondřej {Tomanec} and M. {Draxler} and P. {Bauer} and Tomáš {Šikola}",
  title="Growth of gallium on sillicon: A TOF-LEIS and AFM study",
  booktitle="New Trend in Physics",
  year="2004",
  pages="4",
  publisher="VUT v Brně",
  address="Brno",
  isbn="80-7355-024-5"
}