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KUMNGERN, M.; TORTEANCHAI, U.; KHATEB, F.
Original Title
0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
This paper describes a new low-voltage low-power transconductance amplifier for low-voltage low-power signal processing applications. The proposed circuit uses bulk-driven quasi-floating gate technique to offer a 0.5 V operating power supply and high operating frequency. The performances of the proposed circuit can be conformed using PSPICE simulations. The simulation result shows that the proposed circuit provides 16.7 uW power consumption and 10 MHz open loop gain. The proposed circuit has been used to realize Tow-Thomas biquad.
English abstract
Keywords
Amplifier; bulk-driven MOS; quasi-floating gate; low-voltage low-power circuit
Key words in English
Authors
RIV year
2019
Released
06.01.2018
Publisher
IEEE
Location
Batumi, Georgia
ISBN
978-9972-1-2874-5
Book
Proceedings of the 2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS).
Pages from
152
Pages to
155
Pages count
4
URL
http://ieeexplore.ieee.org/document/8292043/
BibTex
@inproceedings{BUT141736, author="Montree {Kumngern} and Usa {Torteanchai} and Fabian {Khateb}", title="0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier", booktitle="Proceedings of the 2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS).", year="2018", pages="152--155", publisher="IEEE", address="Batumi, Georgia", doi="10.1109/ICECS.2017.8292043", isbn="978-9972-1-2874-5", url="http://ieeexplore.ieee.org/document/8292043/" }