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MOJROVÁ, B.; CHU, H.; PETER, C.; PREIS, P.; LOSSEN, J.; MIHAILETCHI, V.; KOPECEK, R.
Original Title
A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack
English Title
Type
WoS Article
Original Abstract
In this study we investigated the passivation quality of boron doped emitters by varying the composition of SiO2/SiNX stack layers. For this purpose, n-PERT (passivated emitter, rear totally-diffused) solar cells with boron doped front side emitter and phosphorous doped back-surface-field (BSF), as well as symmetrical boron doped structures, were fabricated on 6-inch n-type wafers.
English abstract
Keywords
solar cell, n-type, passivation, boron emitter, NAOS
Key words in English
Authors
RIV year
2018
Released
01.09.2017
ISBN
1876-6102
Periodical
Energy Procedia
Number
124
State
Kingdom of Thailand
Pages from
288
Pages to
294
Pages count
952
BibTex
@article{BUT141006, author="Barbora {Mojrová} and Haifeng {Chu} and Christop {Peter} and Pirmin {Preis} and Jan {Lossen} and Valentin {Mihailetchi} and Radovan {Kopecek}", title="A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack", journal="Energy Procedia", year="2017", number="124", pages="288--294", doi="10.1016/j.egypro.2017.09.301", issn="1876-6102" }