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BIOLEK, D.; BIOLKOVÁ, V.; KOLKA, Z.
Original Title
Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
Modifications of the mathematical model of the TiO2 memristor, based on the approximations of Simmons' equations of tunnel effects in Metal-Insulator-Metal structures, are proposed. These modifications improve the performance of the model in the SPICE environment, taking into account the numerical limits of SPICE-family programs.
English abstract
Keywords
memristor; tunnel effect; Pickett's model; SPICE
Key words in English
Authors
RIV year
2018
Released
12.06.2017
Publisher
IEEE
Location
USA
ISBN
978-1-5090-5052-9
Book
Proc. of 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017
Edition
1
Pages from
Pages to
4
Pages count
URL
http://dx.doi.org/10.1109/SMACD.2017.7981564
BibTex
@inproceedings{BUT140991, author="Dalibor {Biolek} and Viera {Biolková} and Zdeněk {Kolka}", title="Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE", booktitle="Proc. of 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017", year="2017", series="1", number="14", pages="1--4", publisher="IEEE", address="USA", doi="10.1109/SMACD.2017.7981564", isbn="978-1-5090-5052-9", url="http://dx.doi.org/10.1109/SMACD.2017.7981564" }