Publication result detail

Electronic transport properties of graphene doped by gallium

MACH, J.; PROCHÁZKA, P.; BARTOŠÍK, M.; NEZVAL, D.; PIASTEK, J.; HULVA, J.; ŠVARC, V.; KONEČNÝ, M.; KORMOŠ, L.; ŠIKOLA, T.

Original Title

Electronic transport properties of graphene doped by gallium

English Title

Electronic transport properties of graphene doped by gallium

Type

WoS Article

Original Abstract

In this work we present the effect of low dose gallium (Ga) deposition (<4ML) performed in UHV (10−7 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.

English abstract

In this work we present the effect of low dose gallium (Ga) deposition (<4ML) performed in UHV (10−7 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.

Keywords

graphene, gallium, CVD, DFT, transport, doping

Key words in English

graphene, gallium, CVD, DFT, transport, doping

Authors

MACH, J.; PROCHÁZKA, P.; BARTOŠÍK, M.; NEZVAL, D.; PIASTEK, J.; HULVA, J.; ŠVARC, V.; KONEČNÝ, M.; KORMOŠ, L.; ŠIKOLA, T.

RIV year

2018

Released

13.10.2017

ISBN

0957-4484

Periodical

NANOTECHNOLOGY

Volume

28

Number

41

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1

Pages to

10

Pages count

10

URL

https://pubmed.ncbi.nlm.nih.gov/28813368/

BibTex

@article{BUT139482,
  author="Jindřich {Mach} and Pavel {Procházka} and Miroslav {Bartošík} and David {Nezval} and Jakub {Piastek} and Jan {Hulva} and Vojtěch {Švarc} and Martin {Konečný} and Lukáš {Kormoš} and Tomáš {Šikola}",
  title="Electronic transport properties of graphene doped by gallium",
  journal="NANOTECHNOLOGY",
  year="2017",
  volume="28",
  number="41",
  pages="1--10",
  doi="10.1088/1361-6528/aa86a4",
  issn="0957-4484",
  url="https://pubmed.ncbi.nlm.nih.gov/28813368/"
}