Publication result detail

Test Stand for Obtaining Power Transistors Switching Characteristics During Aging

KNOBLOCH, J.; MARTIŠ, J.; CIPÍN, R.; NOUMAN, Z.

Original Title

Test Stand for Obtaining Power Transistors Switching Characteristics During Aging

English Title

Test Stand for Obtaining Power Transistors Switching Characteristics During Aging

Type

Paper in proceedings (conference paper)

Original Abstract

This paper aims to construction, control and implemented measurement method of laboratory stand in order to acquire insulated gate bipolar transistor transients. The transients waveforms are consequently used to obtain indicators of the transistor age. The lifetime tests of an insulated gate bipolar transistor are introduced. Consequently, a novel architecture of measuring stand in order to provide lifetime tests is designed. Also the control algorithm is presented. A fundamental part of this work is a method of measuring switching waveforms including a high frequency current. Acquired waveforms of transistor switching are presented. Finally, the trend of chosen aging indicator values was obtained from the acquired data. Namely the influence of aging on turn--off time was observed.

English abstract

This paper aims to construction, control and implemented measurement method of laboratory stand in order to acquire insulated gate bipolar transistor transients. The transients waveforms are consequently used to obtain indicators of the transistor age. The lifetime tests of an insulated gate bipolar transistor are introduced. Consequently, a novel architecture of measuring stand in order to provide lifetime tests is designed. Also the control algorithm is presented. A fundamental part of this work is a method of measuring switching waveforms including a high frequency current. Acquired waveforms of transistor switching are presented. Finally, the trend of chosen aging indicator values was obtained from the acquired data. Namely the influence of aging on turn--off time was observed.

Keywords

aging; IGBT; collector current measurement; failure indicator; switching characteristic.

Key words in English

aging; IGBT; collector current measurement; failure indicator; switching characteristic.

Authors

KNOBLOCH, J.; MARTIŠ, J.; CIPÍN, R.; NOUMAN, Z.

RIV year

2018

Released

07.06.2017

Location

Milán, Italská republika

ISBN

978-1-5386-3916-0

Book

Conference Proceedings 2017 IEEE International Conference on Environment and Electrical Engineering and 2017 IEEE Industrial and Commercial Power Systems Europe

Pages from

393

Pages to

397

Pages count

5

URL

https://ieeexplore.ieee.org/document/7977460

BibTex

@inproceedings{BUT137073,
  author="Jan {Knobloch} and Jan {Martiš} and Radoslav {Cipín} and Ziad {Nouman}",
  title="Test Stand for Obtaining Power Transistors Switching Characteristics During Aging",
  booktitle="Conference Proceedings 2017 IEEE International Conference on Environment and Electrical Engineering and 2017 IEEE Industrial and Commercial Power Systems Europe",
  year="2017",
  number="1",
  pages="393--397",
  address="Milán, Italská republika",
  doi="10.1109/EEEIC.2017.7977460",
  isbn="978-1-5386-3916-0",
  url="https://ieeexplore.ieee.org/document/7977460"
}