Publication result detail

Diagnostics of GaAsP Light Emitting Diode PN Junctions

KOKTAVÝ, P., KOKTAVÝ, B.

Original Title

Diagnostics of GaAsP Light Emitting Diode PN Junctions

English Title

Diagnostics of GaAsP Light Emitting Diode PN Junctions

Type

Paper in proceedings (conference paper)

Original Abstract

Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rms value versus DC current plot based method.

English abstract

Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rms value versus DC current plot based method.

Keywords

PN Junction, Microplasma noise, Quality, Avalanche breakdown

Key words in English

PN Junction, Microplasma noise, Quality, Avalanche breakdown

Authors

KOKTAVÝ, P., KOKTAVÝ, B.

Released

01.01.2003

Publisher

CNRL

Location

Brno

Book

Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, Abstracts Book

Pages from

50

Pages count

1

BibTex

@inproceedings{BUT13529,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="Diagnostics of GaAsP Light Emitting Diode PN Junctions",
  booktitle="Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, Abstracts Book",
  year="2003",
  pages="1",
  publisher="CNRL",
  address="Brno"
}