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MOJROVÁ, B.; MIHAILETCHI, V.
Original Title
Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
In this work the influence of thickness of Silicon Nitride (SiNX) layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on passivation quality and contact resis-tivity (ρC) of n-type Passivated Emitter Rear Totally-diffused (n-PERT) cell was investigated. The solar cell structure comprises front boron emitter and a phosphorous back surface field (BSF) with SiNX layers on both sides for surface passivation. Contacts are made by screen printed and fired through metallization using commercial silver (Ag) paste.
English abstract
Keywords
Silicon Solar Cell; n-Type; n-PERT; SiNx; Passivation; Contact Resistivity.
Key words in English
Authors
RIV year
2017
Released
28.04.2016
Publisher
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Location
Brno
ISBN
978-80-214-5350-0
Book
Proceedings of the 22nd Conference STUDENT EEICT 2016
Pages from
690
Pages to
695
Pages count
5
BibTex
@inproceedings{BUT124312, author="Barbora {Mojrová} and Valentin {Mihailetchi}", title="Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell", booktitle="Proceedings of the 22nd Conference STUDENT EEICT 2016", year="2016", pages="690--695", publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií", address="Brno", isbn="978-80-214-5350-0" }