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KLENOVSKÝ, P.; HEMZAL, D.; STEINDL, P.; ZIKOVÁ, M.; KŘÁPEK, V.; HUMLÍČEK, J.
Original Title
Polarization anisotropy of the emission from type-II quantum dots
English Title
Type
WoS Article
Original Abstract
We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k - p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wave function and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.
English abstract
Keywords
Type II quantum dots; Emission; Theory
Key words in English
Authors
RIV year
2016
Released
15.12.2015
Publisher
American Physical Society
ISBN
0163-1829
Periodical
PHYSICAL REVIEW B
Volume
92
Number
24
State
United States of America
Pages from
241302-1
Pages to
241302-5
Pages count
5
URL
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.241302
Full text in the Digital Library
http://hdl.handle.net/11012/201032
Documents
PhysRevB.92.241302