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CHOBOLA, Z.; LUŇÁK, M.; VANĚK, J.; HULICIUS, E.; KUSÁK, I.
Original Title
Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy
English Title
Type
WoS Article
Original Abstract
The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE. Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE technology.
English abstract
Keywords
molecular beam epitaxy; excess noise; lasers diodes
Key words in English
Authors
RIV year
2016
Released
01.08.2015
Publisher
Faculty of Electrical Engineering and Information Technology of the Slovak University of Technology
Location
Bratislava
ISBN
1335-3632
Periodical
Journal of Electrical Engineering-Elektrotechnicky Casopis
Volume
66
Number
4
State
Slovak Republic
Pages from
226
Pages to
230
Pages count
5
URL
https://content.sciendo.com/view/journals/jee/66/4/article-p226.xml
Full text in the Digital Library
http://hdl.handle.net/11012/84115
BibTex
@article{BUT117577, author="Zdeněk {Chobola} and Miroslav {Luňák} and Jiří {Vaněk} and Eduard {Hulicius} and Ivo {Kusák}", title="Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy", journal="Journal of Electrical Engineering-Elektrotechnicky Casopis", year="2015", volume="66", number="4", pages="226--230", doi="10.2478/jee-2015-0036", issn="1335-3632", url="https://content.sciendo.com/view/journals/jee/66/4/article-p226.xml" }
Documents
[1339309X - Journal of Electrical Engineering] Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy