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FLORIÁN, P.; POSPÍŠIL, J.; ZMEŠKAL, O.
Original Title
Simple Method for the Determination of the Type of Charge Carriers in Semiconductors
English Title
Type
Scopus Article
Original Abstract
The source-drain current-voltage characteristic is linear and symmetric at low voltages. The linearity and symmetry can be influenced by the electric potential of a gate electrode. Because the process is sensitive to the type of semiconductor, the method – “modified field effect transistor method” – can be used for the determination of the type of majority charge carriers. No insulating layer between the source-drain and gate electrodes is used. The effect is demonstrated on P- and N type organic semiconductors, 6-bis[5-(benzofuran-2-yl)-thiofen-2-yl]-2,5-bis(2-ethylhexyl) pyrrolo[3,4-c]pyrrole-1,4-dione [DPP(TBFu)2] and phenyl-C61-butyric acid methyl ester [PCBM], respectively.
English abstract
Keywords
Field effect analysis, Charge carrier injection, Type of charge carriers, Diketopyrrolopyrrole derivative, Phenyl-C61-butyric acid methyl ester
Key words in English
Authors
RIV year
2017
Released
01.04.2016
Publisher
Trans Tech Publications Inc
ISBN
0255-5476
Periodical
Materials Science Forum
Volume
851
Number
4
State
Swiss Confederation
Pages from
179
Pages to
183
Pages count
5
URL
https://www.scientific.net/MSF.851.179
BibTex
@article{BUT116080, author="Pavel {Florián} and Jan {Pospíšil} and Oldřich {Zmeškal}", title="Simple Method for the Determination of the Type of Charge Carriers in Semiconductors", journal="Materials Science Forum", year="2016", volume="851", number="4", pages="179--183", doi="10.4028/www.scientific.net/MSF.851.179", issn="0255-5476", url="https://www.scientific.net/MSF.851.179" }
Documents
978-0-00003-261-4_10