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KOLKA, Z.; BIOLEK, D.; BIOLKOVÁ, V.
Original Title
Enhanced PSpice Model of TiO2 Memristor
English Title
Type
Peer-reviewed article not indexed in WoS or Scopus
Original Abstract
The present paper enhances Pickett's model of the TiO2 memristor by modifying its Port Equation in order to eliminate a non-physical negative resistance region that occurs at higher currents. This region causes an ambiguity of the static I-V characteristic, which may bring non-convergence, numerical errors, and non-physical solutions during time-domain simulation. The modification is based on the tangential extrapolation. Full listing of the (P)Spice macromodel is provided.
English abstract
Keywords
TiO2 memristor, Port Equation, State Equation, Pickett's model, Spice, simulation
Key words in English
Authors
RIV year
2016
Released
15.07.2015
Publisher
NAUN
Location
USA
ISBN
2313-0555
Periodical
INTERNATIONAL JOURNAL OF MATERIALS
Volume
2
Number
1
State
United States of America
Pages from
25
Pages to
28
Pages count
4
URL
http://www.naun.org/main/NAUN/materials/2015/a085824035.pdf
BibTex
@article{BUT115395, author="Zdeněk {Kolka} and Dalibor {Biolek} and Viera {Biolková}", title="Enhanced PSpice Model of TiO2 Memristor", journal="INTERNATIONAL JOURNAL OF MATERIALS", year="2015", volume="2", number="1", pages="25--28", issn="2313-0555", url="http://www.naun.org/main/NAUN/materials/2015/a085824035.pdf" }